DC/DC Converter for IGBT Driver

Posted by Ken Bloom on

What Should Be Considerd for DC/DC Converter in IGBT Application?

Output voltages: +15V /-5V to -10V
Coupling capacitance: < 15pF.

Temperature rating , converter isolation, gate power requirement, efficiency …
The same considerations apply in principal to gate dives for SiC and MOSFETs.
2.8W QAxx1 series, 4.8W QAW series and QA01C are DC/DC converters specialized for IGBT/SiC MOSFET driver

DC/DC Converter for IGBT/ SiC MOSFET Driver

2.8W DC/DC Converter QAxx1 for IGBT Driver

  • 12V, 15V, 24V inputs
  • Dual output voltage: +15V/-8V, 120mA output current
  • Efficiency up to 81%
  • Isolation: 3000VAC
  • Low coupling capacitance: 6pF
  • Capacitance load: Max. 1000μF
  • Operating temperature: -40℃ to +105℃

4.8W DC/DC Converter QAW01/02 for IGBT Driver

  • 2:1 wide input: 9-18V & 18-36V
  • Dual output voltage: +15V/ -9V
  • Efficiency up to 85%
  • Isolation: 3000VAC
  • Capacitance load: Max. 1000μF
  • Operating temperature: -40℃ to +85℃

QA01C Target SiC MOSFET Driver

  • Efficiency up to 83%
  • Dual output voltage: +20V/-4V
  • Isolation: 3500VAC/6000VDC
  • Low coupling capacitance: 3.5pF
  • Capacitance load: Max.220uF
  • Operating temperature: -40℃ to +105℃
  • Continuous short-circuit protection

Share this post

← Older Post